| PART |
Description |
Maker |
| BVSS123LT1G |
Power MOSFET 170 mAmps, 100 Volts
|
ON Semiconductor
|
| SS14T3 |
Power MOSFET 170 mAmps, 100 Volts
|
ON Semiconductor
|
| MGSF1P02EL |
Power MOSFET 750 mAmps, 20 Volts
|
ON Semiconductor
|
| 2N7002TL-AN3-R 2N7002TG-AN3-R |
300 mAmps, 60 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
Leshan Radio Company
|
| MMBF2202PT1-D |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
|
ON Semiconductor
|
| BSV52LT1 BSV52L BSV52LT1-D BSV52LT1/D |
Switching Transistor (NPN Silicon)
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
|
ON Semiconductor
|
| 2N7002LT3 2N7002LT1 L2N7003LT1 |
Small Signal MOSFET 115 mAmps 60 Volts
Small Signal MOSFET 115 mAmps/ 60 Volts
Small Signal MOSFET 115 mAmps, 60 Volts 小信号MOSFET 115 mAmps0伏特
|
http://
LRC[Leshan Radio Company]
Leshan Radio Company, Ltd.
|
| MRF21180R6 MRF21180 |
2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
|
Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| SGM0410 |
3.5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| SID05N10 |
5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET
|
http://
|
